Prof. Scarpulla is the PI for a large multi-institution project on Ga2O3. The AFOSR selected the group for a Multidisciplinary University Research initiative (MURI) in 2018 and extended it in 2021 to 2024. The current project has 8 PIs at University of Utah (Scarpulla, Krishnamoorthy, Sensale-Rodriguez), Washington State University (Lynn, McCloy, McCluskey, and Weber), University of Illinois Urbana-Champaign (Ertekin), and Penn State University (Alem). The project is titled “Fundamentals of Doping and Defects in Ga2O3 for high breakdown fields” and focuses on how to manipulate extrinsic and intrinsic defects and their effects on Ga2O3 which is an emerging ultrawide bandgap semiconductor. In the distant past, GaAs with bandgap 1.42 eV was considered a “wide gap” semiconductor because it was being compared to InAs and InSb. The bandgap of Ga2O3 is 4.8 eV which is close to the bandgaps of many materials considered ceramics and insulators.